25N120ANTD IGBT – 1200V 25A NPT Trench IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating, microwave oven. Features:- • NPT Trench Technology, Positive Temperature Coefficient • Low Saturation Voltage: VCE(sat), typ = 2.0 V @ IC = 25 A and TC = 25C • Low Switching Loss: Eoff, typ = 0.96 mJ @ IC = 25 A and TC = 25C • Extremely Enhanced Avalanche Capability Applications:- • Induction Heating • Microwave Oven Specifications:- Symbol Description Ratings Units VCES Collector-Emitter Voltage 1200 V VGES Gate-Emitter Voltage ±20 V IC Collector Current @ TC = 25°C 50 A Collector Current @ TC = 100°C 25 A ICM Pulsed Collector Current 90 A IF Diode Continuous Forward Current @ TC = 25°C 50 A Diode Continuous Forward Current @ TC = 100°C 25 A IFM Diode Maximum Forward Current 150 A PD Maximum Power Dissipation @ TC = 25°C 312 W Maximum Power Dissipation @ TC = 100°C 125 W TJ Operating Junction Temperature -55 to 150 °C Tstg Storage Temperature Range 55 to 150 °C TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds 300 °C
